ATF-551M4

Single Voltage E-pHEMT Low Current Low Noise 24dBm OIP3 in MiniPak

Currently Viewing:

This Low Current Single Voltage Enhanced Mode E-pHEMT GaAs FET comes packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for receiver LNA or hybrid modules for handsets, Wireless LAN, fixed wireless and other RF applications in the 450MHz to 10GHz frequency range.

Its superior high frequency performance at 3V makes it ideal as a LNA for 5-6 GHz 802.11a and HIPERLAN/2 Wireless LAN PCMCIA PC cards.

Features

  • Typical low current performance at 2 GHz 2.7V/10mA is NF=0.5dB, OIP3=24dBm, P1dB=14.6dBm and Ga=17.5dB
  • Typical higher current performance at 2 GHz 3V/20mA is NF=0.5dB, OIP3=30dBm, P1dB=16dBm and Ga=18dB
  • Typical performance at 5.8 GHz 2.7V/10mA is Fmin=0.9dB, OIP3=24.5dBm, P1dB=14dBm and Ga=12dB

Lifecycle Status

Active

Certifications

  • RoHS6
    Fully Compliant

Lifecycle Status

Active

Substance Compliance

  • RoHS6
    Fully Compliant
Specification Value
Lifecycle Active
Distrib. Inventory Yes
Samples Available Yes
RoHS6 Compliant Y
Max Qty of Samples 25
Frequency (GHz) 0.45-6
Bias Condition (V@mA) 2.7V@10mA
NF (dB) 0.5
Gain (dB) 17.5
P1dB (dBm) 14.6
OIP3 (dBm) 24.1
Package SMT 1.4x1.2

Documentation

ADS Model (1) i
Application Brief (2) i
Application Note (7) i
Product Change Notice (PCN) (9) i
S-Parameter (10) i
White Papers (1) i

Optional Products

DEMO-ATF-5X1M4E

Demonstration circuit board for New Source Inductance