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Avago's GaAs FET uses a reverse-biased Schottky-barrier gate fabricated with the PHEMT technology. These devices have a combination of high linearity and PAE, high gain and low noise features.

GaAs FET devices using PHEMT technology are suitable for applications in wireless LAN and other systems requiring low noise figures.
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FET
Part Number Product Name Frequency (GHz) Bias Condition (V@mA) NF (dB) Gain (dB) P1dB (dBm) OIP3 (dBm) Package Distributor Inventory Lifecycle RoHS6 fully compliant Data Sheets & Technical Specifications





















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ATF-55143 Single Voltage E-pHEMT Low Current Low Noise 24.2dBm OIP3 in SC-70 0.45-6 2.7V@10mA 0.6 17.7 24.2 SOT-343 Yes Active Y Data Sheet - ATF-55143, Low Noise Enhancement Mode Pseudormorphic HEMT a Surface Mount
ATF-50189 Single Voltage E-pHEMT Low Noise 45 dBm OIP3 in SOT-89 package 0.4-3.9 4.5V@280mA 1.1 15.5 29 45 SOT-89 Yes Active Data Sheet - ATF-50189 - Enhancement Mode Pseudomorphic HEMT in SOT 89 Package
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