Low 1/f noise general purpose Schottky diode

The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented guard-ring design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited to high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping applications.

Data Sheets & Technical Specifications

• Data Sheet - 1N5711, 1N5712, 50822300 , 50822800 , 50822900 Schottky Barrier Diodes for General Purpose Applications(249 KB,PDF)

Application Notes

• Application Note - AN 1088: Designing the Virtual Battery(1083 KB,PDF)
• Application Note - AN 1156: Diode Detector Simulation EEs ADS Softward(162 KB,PDF)
• Application Note - AN 923: Schottky Barrier Video Detectors(190 KB,PDF)
• Application Note - AN 9441: Microwave Transistor Bias Considerations(1447 KB,PDF)
• Application Note - AN 9561: The Criterion for the Tangential Sensitivity Measurement(123 KB,PDF)
• Application Note - AN 956-3 Flicker Noise Schottky Diodes(160 KB,PDF)
• Application Note - AN 956-4; Schottky Diode Voltage Doubler(81 KB,PDF)
• Application Note - AN 956-5: Dynamic Range Extension Schottky Detectors(112 KB,PDF)
• Application Note - AN 956-6: Temperature Dependence Schottky Detector Voltage Sensitivity (512 KB,PDF)
• Application Note - AN 963: Matching Techniques for Mixers Detectors(1019 KB,PDF)
• Application Note - AN 986: Square Law Linear Detection(663 KB,PDF)
• Application Note - AN 987: Is Bias Current Necessary(115 KB,PDF)
• Application Note - AN 988: All Schottky Diodes are Zero Bias Detectors(769 KB,PDF)
• Application Note - AN A004R: Electrostatic Discharge mage Control(396 KB,PDF)
• Application Note - AN A006: Mounting Considerations for Microwave Semiconductors(87 KB,PDF)

Obsolescence Notices

• Obsolescence Notice - Obsolescence notice for Glass Axial(22 KB,PDF)

Product Change Notices

• Product Changes Notice (PCN) - CCN:051595dg2 - 5082-xxxx Mfg. location changes(242 KB,PDF)
• Product Changes Notice (PCN) - CCN:0796dg2 - Consolidation and Standardization on Plating Processes(126 KB,PDF)
• Product Changes Notice (PCN) - CCN:9907a - 5082 and 1N marking change(28 KB,PDF)
• Product Changes Notice (PCN) - CCN:Glassdiode - Improvement in Manufacturing Cycle Time.(18 KB,PDF)
• Product Changes Notice (PCN) - CCN021402AT1 - Transfer of semiconductor wafer fabrication(17 KB,PDF)
• Product Changes Notice (PCN) - CCN082401TC1 - Si wafer epitaxy transferred from Newark to San Jose, CA fab(24 KB,PDF)
• Product Changes Notice (PCN) - PCN: A04-012-480035-0A, Dec. 2004(16 KB,PDF)
• Product Changes Notice (PCN) - RF/mW Schottky and PIN Diodes in Glass Package Outline 15.(18 KB,PDF)

Quality & Reliability

• Reliability Data Sheet - Glass RF Schottky Diodes(70 KB,PDF)