RF & Microwave

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ATF-511P8

Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC

Description
The ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.

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Lifecycle status:Active

ATF-521P8

Features
  • At 2GHz, the ATF-511P8 delivers high OIP3 of up to 41.7dBm, P1dB of 30dBm and low NF of 1.4dB, requiring only 4.5V/200mA for DC biasing.
  • The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of 85°C.
Documents

Data Sheets & Technical Specifications

Application Notes

  • ADS Model  - ATF-511P8 ADS Model(21 KB,ZAP)
  • AppCad - AppCAD - Latest AppCAD Setup Version 3.0.2(13960 KB,ZIP)
  • Layout - ATF-5x1P8 AutoCAD layout drawing(23 KB,ZIP)
  • S-Parameter - S and noise parameters at 3V, 100mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 3V, 135mA(14 KB,S2P)
  • S-Parameter - S and noise parameters at 3V, 200mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 3V, 300mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 4.5V, 100mA(19 KB,S2P)
  • S-Parameter - S and noise parameters at 4.5V, 200mA(19 KB,S2P)
  • S-Parameter - S and noise parameters at 4.5V, 300mA(19 KB,S2P)
  • S-Parameter - S and noise parameters at 4V, 100mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 4V, 200mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 4V, 300mA(2 KB,S2P)
  • S-Parameter - S and Noise Parameters at 5V(6 KB,S2P)
  • S-Parameter - S and Noise Parameters at 5V(7 KB,S2P)
  • S-Parameter - S and noise parameters at 5V, 100mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 5V, 200mA(2 KB,S2P)
  • S-Parameter - S and noise parameters at 5V, 300mA(2 KB,S2P)
  • Product Change Notices

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