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HMPS-2825
RF/Microwave mixer/detector diode
Description
Features
Documents
Data Sheets & Technical Specifications
- Data Sheet - HMPS-282x, MiniPak Surface Mount RF Schottky Barrier Diodes (444 KB,PDF)
- Selection Guide - PIN and Schottky Diode(265 KB,PDF)
Application Notes
- Application Brief - Surface Mount Schottky PIN Diode(57 KB,PDF)
- Application Note - AN 1069: Non RF Applications for the Surface Mount Schottky Diode Pairs HSMS2802 HSMS2822(149 KB,PDF)
- Application Note - AN 1088: Designing the Virtual Battery(97 KB,PDF)
- Application Note - AN 1124: Linear Models for Diode Surface Mount Packages(119 KB,PDF)
- Application Note - AN 1156: Diode Detector Simulation EEs ADS Softward(162 KB,PDF)
- Application Note - AN 1187: Design an Input Matching Network for a DC Biased 850 MHz Small Signal Detector(217 KB,PDF)
- Application Note - AN 923: Schottky Barrier Video Detectors(190 KB,PDF)
- Application Note - AN 9441: Microwave Transistor Bias Considerations(113 KB,PDF)
- Application Note - AN 9561: The Criterion for the Tangential Sensitivity Measurement(132 KB,PDF)
- Application Note - AN 9563 Flicker Noise Schottky Diodes(145 KB,PDF)
- Application Note - AN 956-3 Flicker Noise Schottky Diodes(145 KB,PDF)
- Application Note - AN 956-4; Schottky Diode Voltage Doubler(83 KB,PDF)
- Application Note - AN 956-5: Dynamic Range Extension Schottky Detectors(51 KB,PDF)
- Application Note - AN 956-6: Temperature Dependence Schottky Detector Voltage Sensitivity (41 KB,PDF)
- Application Note - AN 963: Matching Techniques for Mixers Detectors(250 KB,PDF)
- Application Note - AN 987: Is Bias Current Necessary(66 KB,PDF)
- Application Note - AN 988: All Schottky Diodes are Zero Bias Detectors(73 KB,PDF)
- Application Note - AN 997: A 2 GHz Balanced Mixer SOT23 Surface Mount Schottky Diodes(132 KB,PDF)
- Application Note - AN A004R: Electrostatic Discharge mage Control(148 KB,PDF)
- Application Note - AN A006: Mounting Considerations for Microwave Semiconductors(87 KB,PDF)
Product Change Notices
- Product Changes Notice (PCN) - A06-003-480035-0A, Nov.2005(26 KB,PDF)
- Product Changes Notice (PCN) - CCN021402AT1 - Transfer of semiconductor wafer fabrication(17 KB,PDF)
- Product Changes Notice (PCN) - CCN082401TC1 - Si wafer epitaxy transferred from Newark to San Jose, CA fab(24 KB,PDF)
- Product Changes Notice (PCN) - CCN082701TC1 - Si wafer substrate will change from 3" to 4"(22 KB,PDF)
- Product Changes Notice (PCN) - PCN: A04-002-480035-0A, Apr. 2004(14 KB,PDF)
- Product Changes Notice (PCN) - PCN: A04-013-480035-0A, Dec. 2004(16 KB,PDF)
- Product Changes Notice (PCN) - PCN: V08-001-480035-0A(80 KB,PDF)
Quality & Reliability
