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HSCH-5330
Beam Lead Silicon Schottky Diodes
Description
The HSCH-5330 / HSCH-533x low barrier beam lead schottky diodes are ideally suited for mixer and detector applications from 1-26GHz.
Features
- Vbr=4V
- Max. (Vf)=375mV
- Max leakage Current (Ir)=400nA
Documents
Data Sheets & Technical Specifications
Application Notes
- Application Note - AN 1088: Designing the Virtual Battery(97 KB,PDF)
- Application Note - AN 1156: Diode Detector Simulation EEs ADS Softward(162 KB,PDF)
- Application Note - AN 923: Schottky Barrier Video Detectors(190 KB,PDF)
- Application Note - AN 9441: Microwave Transistor Bias Considerations(113 KB,PDF)
- Application Note - AN 9561: The Criterion for the Tangential Sensitivity Measurement(132 KB,PDF)
- Application Note - AN 9563 Flicker Noise Schottky Diodes(145 KB,PDF)
- Application Note - AN 956-3 Flicker Noise Schottky Diodes(145 KB,PDF)
- Application Note - AN 956-4; Schottky Diode Voltage Doubler(83 KB,PDF)
- Application Note - AN 956-5: Dynamic Range Extension Schottky Detectors(51 KB,PDF)
- Application Note - AN 956-6: Temperature Dependence Schottky Detector Voltage Sensitivity (41 KB,PDF)
- Application Note - AN 963: Matching Techniques for Mixers Detectors(250 KB,PDF)
- Application Note - AN 969: The Zero Bias Schottky Detector Diode(210 KB,PDF)
- Application Note - AN 987: Is Bias Current Necessary(66 KB,PDF)
- Application Note - AN 988: All Schottky Diodes are Zero Bias Detectors(73 KB,PDF)
- Application Note - AN 992: Beam Lead Attachment Methods(140 KB,PDF)
- Application Note - AN 993: Beam Lead Device Bonding to Soft Substrates(67 KB,PDF)
- Application Note - AN 9931: The Stress Relief Beam Lead Diode Assembly(55 KB,PDF)
- Application Note - AN A004R: Electrostatic Discharge mage Control(148 KB,PDF)
- Application Note - AN A006: Mounting Considerations for Microwave Semiconductors(87 KB,PDF)
Product Change Notices
- Product Changes Notice (PCN) - CCN021402AT1 - Transfer of semiconductor wafer fabrication(17 KB,PDF)
- Product Changes Notice (PCN) - CCN 022802PSD1 - Standardize gel-pack material for Avago Technologies' silicon diode, bipolar transistor and monolithic amplifier die sales(37 KB,PDF)
- Product Changes Notice (PCN) - CCN082401TC1 - Si wafer epitaxy transferred from Newark to San Jose, CA fab(24 KB,PDF)
- Product Changes Notice (PCN) - Qualifying New Contract Manufacturers(348 KB,PDF)
Quality & Reliability
