RF & Microwave
- Amplifiers
- Attenuators
- Demo Boards
- Diodes
- FBAR Filters
- Front End Modules
- Mixers
- Multipliers
- Switches
- Transistors
Follow Avago Online
HMPP-3892
MiniPak PIN switch diode
Description
The HMPP-3892 / HMPP-389x series is optimized for pin diode switching applications where low resistance at low current and low capacitance are required.
The MiniPak package offers reduced parasitics when compared to conventional leaded diodes, and lower thermal resistance.
The MiniPak package offers reduced parasitics when compared to conventional leaded diodes, and lower thermal resistance.
Features
- VBR=50 V
- Ct=0.30 pF
- Rs@5mA=2.5 ohms
- Tau= 200 nSec
Documents
Data Sheets & Technical Specifications
- Data Sheet - HMPP-389x, MiniPak Surface Mount RF PIN Switch Diodes(268 KB,PDF)
- Selection Guide - PIN and Schottky Diode(265 KB,PDF)
Application Notes
- Application Brief - Surface Mount Schottky PIN Diode(57 KB,PDF)
- Application Note - AN 1048: Cost Surface Mount PIN Diode Pi Attenuator(146 KB,PDF)
- Application Note - AN 1049: A Distortion PIN Diode Switch Surface Mount Devices(177 KB,PDF)
- Application Note - AN 1067: An SPDT PIN Diode T R Switch for PCN Applications(299 KB,PDF)
- Application Note - AN 1072: Applications for the HSMP3890 Surface Mount Switching PIN Diode(133 KB,PDF)
- Application Note - AN 1124: Linear Models for Diode Surface Mount Packages(141 KB,PDF)
- Application Note - AN 1312: Evaluating the HMPP-3860, HMPP-3890 PIN Switches on the RW053B Demoboard(963 KB,PDF)
- Application Note - AN 9571: Broading the Shunt PIN Diode SPDT Switch(114 KB,PDF)
- Application Note - AN 9572: Reducing the Insertion Loss a Shunt PIN Diode(105 KB,PDF)
- Application Note - AN A004R: Electrostatic Discharge mage Control(396 KB,PDF)
- Application Note - AN A006: Mounting Considerations for Microwave Semiconductors(87 KB,PDF)
Product Change Notices
- Product Changes Notice (PCN) - A06-003-480035-0A, Nov.2005(26 KB,PDF)
- Product Changes Notice (PCN) - CCN021402AT1 - Transfer of semiconductor wafer fabrication(17 KB,PDF)
- Product Changes Notice (PCN) - CCN082401TC1 - Si wafer epitaxy transferred from Newark to San Jose, CA fab(24 KB,PDF)
- Product Changes Notice (PCN) - CCN082701TC1 - Si wafer substrate will change from 3" to 4"(22 KB,PDF)
- Product Changes Notice (PCN) - PCN: A04-002-480035-0A, Apr. 2004(14 KB,PDF)
- Product Changes Notice (PCN) - PCN: A04-013-480035-0A, Dec. 2004(16 KB,PDF)
- Product Changes Notice (PCN) - V08-019-480036-0A(173 KB,PDF)
Quality & Reliability
